The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

While contact gate pitch (GP) and fin pitch (FP) scaling continues to provide higher performance and lower power to finFET platforms, controlling RC parasitics and achieving higher transistor ...